MANUFACTURING METHOD OF MULTI-LAYERS IN CMOS TR

摘要

The epitaxial single crystal or polycrystal silicon layer is used as a substrate of P MOS transistor, and the electrode is formed on the above silicon layer, then the driving current characteristic is improved by keeping the potential of the substrate constant. The drain region for N MOS transistor formed on the single crystal silicon substrate is connected directly to the drain region for P MOS transistor formed on the epitaxial single crystal or polycrystal silicon layer so that the large integrated CMOS transistor with multilayer can be fabricated.