发明名称 HIGH VOLTAGE GENERATING CIRCUIT OF SEMICONDCUTOR DEVICE
摘要 The device reduces the threshold voltage loss of the clamping device and charge transfer device and improves the effectiveness. The device includes: the 1st clamping means (51) for inputting the 3rd oscillating signal (&phgr;osc23) from an oscillating signal generator; the 2nd clamping means (52) for inputting the 4th oscillating signal (&phgr;osc24); the 1st charging pumping means (53) for inputting the 2nd oscillating signal (&phgr;osc22); the 2nd charge pumping means (54) for inputting the 1st oscillating signal (&phgr;osc21) and the charge transfer means (55) for connecting the input to the output of the charge pumping means (53,54) and clamping means (51,52).
申请公布号 KR930008876(B1) 申请公布日期 1993.09.16
申请号 KR19900012703 申请日期 1990.08.17
申请人 HYUNDAI ELECTRONICS CO., LTD. 发明人 OH, JONG - HUN
分类号 G11C11/407;H01L21/822;H01L27/04;H02M3/07;H03K17/16;(IPC1-7):H01L27/04 主分类号 G11C11/407
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