OPEN TUBE-TYPE DIFFUSION DEVICE

摘要

The device diffuses impurity in the semiconductor wafer. The device includes the diffusion source box (11) on the semiconductor wafer, the to-be-diffused box (81) for composing the wafer (31) to wafer-to- be-diffused box, openings of the diffusion source box and the wafer box (81), a slider (41) for forming the passage of the gas, and an open-closure shutter structure for controlling the openings of the diffusion source box (11) and the wafer box (81), and the slider (41). The gas is nitrogen gas (N2) or hydrogen gas (H2). The wafter to be diffused is made of GaAs and InP family.