DEVICE SEPERATING METHOD OF SEMICONDUCTOR APPARATUS

摘要

The method for prevent the channel stop layer to expand into the active region comprises steps: (a) forming a pad oxide layer and 1st nitride layer; (b) forming an opening hole at the 1st nitride layer for defining the element isolation, and a field oxide layer selectively on it; (c) forming a 2nd nitride layer and a photoresist layer; (d) patterning to form the same opening hole; (e) forming a spacer by filling and etching a PETEOS (plasma enhanced triethyl orthosilicate) layer in the hole; and (e) etching the photoresist, spacer, 2nd and 1st nitride layers and the oxide layer in sequence.