| 摘要 |
The BiCMOS drive circuit according to the present invention comprises a logic unit (31) for converting an input signal into a logic level, a high-current drive unit (33) for driving the logic level with a high current, and formed by bipolar devices and a speed-enhancing logic unit (32) interposed between the logic unit (31) and the high-current drive unit (33) and formed by devices possessing a high input impedance in order to reduce the discharge time of the high-current drive unit. By using a CMOS inverter in the logic unit (32) in place of a usual resistor occupying a larger space, the circuit makes it possible to reach a high density in a semiconductor device. As the discharge circuit of a transistor is formed by a MOS device possessing a high input impedance, the discharge time constant is reduced, increasing the operating speed of the circuit. <IMAGE>
|
