| 摘要 |
PURPOSE:To form an ideal junction surface, by continuously changing the concentration of either one element out of a plurality of elements in a film forming space, and making the concentration have an extremal value at a specified portion in the film forming space. CONSTITUTION:The arrangement of holes formed in the bottom part of a film forming space is characteristic. When an alpha-SiGe film which has the smallest band gap, i.e., the highest Ge content, in the vicinity of a gas discharging vent is to be obtained, exhaust vents are concentrically arranged at the portion corresponding to said film. From gas discharging vents 112a-112d, SiH4 gas and GeH4 gas are made to flow while the flow rates are suitably adjusted, and microwave is introduced into all applicators 110a-110d. When a film is deposited in the above state, the Ge content in the film forming space is made zero, and a film whose band gap is indentical to that of a-Si can be formed. Thereby an ideal junction surface can be formed. |
