| 摘要 |
PURPOSE:To form a current block layer selectively to an active layer just under an upper electrode at the time of one-time epitaxial growth, to improve productivity by simplifying a process and manufacturing a semiconductor light- emitting device at low cost, to enhance luminous power conversion efficiency by making crystallizability better by diminishing a recrystallization level, and to prevent the formation of a high resistance layer and making the characteristics of a light-emitting diode better. CONSTITUTION:Upon selective irradiation with light from the outside at the time of epitaxial growth, P-N inversion is generated in a current diffusion layer 15 in the upper section or lower section of an active layer 13, a current block section 20a is formed to a section just under an upper electrode 17, and current passing sections 20b are formed selectively in regions except the section just under the upper electrode. |
