发明名称 FORMING METHOD FOR COMPOUND SEMICONDUCTOR THIN FILM LAYER
摘要 PURPOSE:To form a thin film containing a desired composition without altering a heating state of an evaporation source by independently controlling an irradiat ing time of an evaporation beam from the source and its continuing time while heating each source at a predetermined temperature. CONSTITUTION:Crucibles 41, 42, 43 respectively having heaters are disposed in a lower section of a vapor-depositing chamber 1 having an exhaust port 3. Cu of evaporating materials is contained in the crucible 41, In is contained in the crucible 42 and Se is contained in the crucible 43. Shutters 5 are respectively provided on openings of the crucibles 41, 42, 43. The shutters 5 are rotated around a support shaft 51 to shut off or pass an evaporation beam to be emitted from the openings when they are heated by heaters contained in the sidewalls of the respective crucibles. Thus, vapor-deposited thin layer films can be formed to multilayer films having different compositions and thicknesses.
申请公布号 JPH05234890(A) 申请公布日期 1993.09.10
申请号 JP19920036781 申请日期 1992.02.25
申请人 FUJI ELECTRIC CORP RES & DEV LTD 发明人 URABE KYOICHI
分类号 C01B19/04;C30B23/08;H01L21/203;H01L21/363;H01L31/04 主分类号 C01B19/04
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