| 摘要 |
<p>PURPOSE:To provide a device element with low gate voltage by forming a second electrode, to which the same potential to the gate is applied, in the coaxial center part of an emitter. CONSTITUTION:A cold cathode is formed by forming an emitter 1, a gate 2, an insulating layer 3, a conductive layer 4. a second electrode 6, a second insulating layer 7, and a second conductive layer 8 on a substrate 5. An anode is installed against the cold cathode. The second electrode 6 is formed on the coaxial center part of the emitter 1 and the same potential to the gate 2 is applied to it. In this structure, in the case that positive voltage is applied to the gate 2 and the second electrode 6 and negative voltage is applied to the emitter 1, an electric field is applied to the tip of the open part of the emitter 1 and electrons are emitted. As employing this structure, the distance between the emitter 1 and the gate 2 and the distance between the emitter 1 and the second electrode 6 are controlled by controlling the thickness of a the thickness of the silicon oxide layer at the forming time of the insulating layer 3 and silicon oxide deposited on the side face of accumulated substance at the forming time of the second insulating layer 7. Consequently, a device element with low gate voltage is obtained.</p> |
