| 摘要 |
<p>PURPOSE:To prevent the generation of etching residues at the time of dry etching of phase shifter patterns. CONSTITUTION:The etching obstructions, such as chromium, sticking to the surface of a transparent layer 26 for the phase shifter patterns are removed by surface etching, by buffer hydrofluoric acid, surface etching using plasma formed by using an inert gas before the phase shifter patterns 26 are formed by dry etching at the time of producing the phase shift mask of a type under laid with a phase shifter (k), by which the generation of the etching residues at the time of dry etching is prevented and the transmittance within the mask plane is maintained constant. The deterioration of the patterns transferred onto a wafer is thus prevented.</p> |
