发明名称 Positive photoresist compsn. contg. naphthoquinone-di:azido-sulphonate - of poly:hydroxy-phenyl benzene or alkane cpd. and alkali-soluble resin with high resolution and speed
摘要 Positive photoresist compsn. contains a 1,2-naphthoquinone-diazido-5- (and/or -4-) sulphonate ester (I) of a polyhydroxy cpd. (II) and an alkali-soluble resin (III). (II) is a 1,3,5-tris (1,1,di-p-hydroxyphenyl-ethyl) benzene cpd. (IIA), tetrakis-, pentakis- or hexakis (p-hydroxyphenyl)-alkane (IIB) or tris- to hexakis(hydroxyphenyl-(alkyl)-carbonyloxy- or -oxycarbonyl) cpd. (IIC) of the formulae: A1 = a p-hydroxyphenyl gp. of formula (IVA); and A1 = a p-hydroxyphenyl gp. of formula (IVA); and A2 = a p-hydroxyphenyl gp. of formula (IVB): R1-7 = H, OH, halogen, alkyl, alkoxy, NO2, alkenyl, aryl, aralkyl, alkoxycarbonyl, arylcarbonyl, acyloxy, acyl, aryloxy or aralkoxy; R31-34 = H, OH, halogen, alkyl, alkoxy or alkenyl; R35-36 = H- alkyl or A2; a and c = 0 or 1; b = 0-4; R41-45 = H, OH, halogen, alkyl or alkoxy, at least one of these being = OH; X = A single bone or -(CH2)m-; Y = -COO-X- or -OCO-X-; Z = an n-valent organic gp.; n = 3-6; m = 1-4. USE/ADVANTAGE - The photoresist compsn. has high resolution and sensitivity, and cna be applied to e.g. semiconductor wafers, glass, ceramics and metals and exposed with UV radiation etc. and useful in the prodn. of semiconductor devices. e.g. ICs and PCBs for liquid crystals and thermal heads and in photography.
申请公布号 DE4304098(A1) 申请公布日期 1993.09.09
申请号 DE19934304098 申请日期 1993.02.11
申请人 FUJI PHOTO FILM CO., LTD., MINAMI-ASHIGARA, KANAGAWA, JP 发明人 KAWABE, YASUMASA, SHIZUOKA, JP;AOAI, TOSHIAKI, SHIZUOKA, JP;KOKUBO, TADAYOSHI, SHIZUOKA, JP
分类号 G03F7/022;H01L21/027 主分类号 G03F7/022
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