| 摘要 |
An image sensor capable of reading with high sensitivity at high speed, in which each light-receiving element consists of two photodiodes PD1 and PD2, which comprise a transparent substrate 1, a metal electrode 2, photoelectric transducing layers 3a and 3b, transparent electrodes 4a and 4b and an insulating layer 5, which layers are formed in superposition and patterned to provide PD1 and PD2 that are interconnected in such a way that the relationship of polarities of one photodiode is reverse to that of the other photodiode. The transparent electrode 4a of photodiode PD1 is connected to a common electrode wiring 7 (typically made of aluminum) via a contact hole 6a formed in the insulating layer 5, whereas the transparent electrode 4b of photodiode PD2 is connected to a lead wiring 8 (typically made of aluminum) via a contact hole 6b also formed in the insulating layer 5. The metal electrode 2 inter-connecting the photodiodes PD1 and PD2 is so specified in position that it is located only in an area that is capable of light reception.
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