发明名称 Phototransistor
摘要 A phototransistor includes a monocrystalline semiconductor substrate of a first conductivity type, a crystalline semiconductor layer of a second conductivity type formed from a surface of the semiconductor substrate to a predetermined depth, a substantially intrinsic amorphous semiconductor layer formed on the crystalline semiconductor layer, and an amorphous semiconductor layer of the first conductivity type formed on the intrinsic amorphous semiconductor layer.
申请公布号 US5243216(A) 申请公布日期 1993.09.07
申请号 US19920839107 申请日期 1992.02.20
申请人 SANYO ELECTRIC CO., LTD. 发明人 NOGUCHI, SHIGERU;IWATA, HIROSHI;SANO, KEIICHI
分类号 H01L31/10;H01L31/0376;H01L31/11 主分类号 H01L31/10
代理机构 代理人
主权项
地址