发明名称 |
Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type |
摘要 |
A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.
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申请公布号 |
US5243202(A) |
申请公布日期 |
1993.09.07 |
申请号 |
US19930004641 |
申请日期 |
1993.01.12 |
申请人 |
CASIO COMPUTER CO., LTD. |
发明人 |
MORI, HISATOSHI;SATO, SYUNICHI;KONYA, NAOHIRO;OHNO, ICHIRO;ISHII, HIROMITSU;MATSUDA, KUNIHIRO |
分类号 |
H01L21/316;H01L21/318;H01L21/336;H01L21/77;H01L21/84;H01L29/49;H01L29/786 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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