发明名称 APPARATUS FOR FORMING A THIN FILM
摘要 S An apparatus for farming a thin film in which the reactive gases, which have been activated by the reactive gas activation means, accelerated by the kinetic energy controlling means, and still more activated by the excimer laser beam emitted toward the neighborhood of the substrate from the excimer laser beam emitting means disposed outside of the vacuum chamber, react with the material to be deposited, which has been clustered or turned into the cluster ion by the ICB device and accelerated, to form a thin film of a compound as the material to be deposited on the substrate disposed within the vacuum chamber maintained at a predetermined degree of vacuum.
申请公布号 CA1321976(C) 申请公布日期 1993.09.07
申请号 CA19870555522 申请日期 1987.12.29
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 ITO, HIROKI
分类号 H01L21/203;C23C14/00;C23C14/22;C23C14/32;H01L49/02 主分类号 H01L21/203
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