| 摘要 |
<p>PURPOSE:To improve the flatness over the entire part of the active matrix substrate except that small regions are partially recessed by forming the top ends of the picture element electrodes on a glass substrate higher than the top ends of thin-film transistors(TFTs). CONSTITUTION:Transparent insulating layers 12 are formed in the regions where the picture element electrodes 3 are formed on the glass substrate 10. The TFTs 2 as well as scanning lines and signal lines are formed in the regions exclusive of the above-mentioned regions. The picture element electrodes 3 are formed on the transparent insulating layers 12. The top ends of the regions where the picture element electrodes 3 are formed are constituted at least at the same height as the top ends of the regions consisting of the TFTs 2 as well as the scanning lines and the signal lines or higher than these top ends. The top ends of the picture element electrodes 3 of the wide regions formed on the glass substrate 10 are formed higher than the top ends of the TFT regions 2 and the wiring regions in such a manner. Then, the flatness over the entire part of the active matrix substrate is improved except that the recessed parts of the partially narrow regions exist within the apparently flat active matrix substrate.</p> |
