| 摘要 |
<p>PURPOSE:To prevent a sink current flowing to a memory cell via a digit line from concentrating at one wire in writing operation. CONSTITUTION:A control circuit 5 to which a writing signal and a data signal are inputted is provided, transistors connected to common sense signal lines S, S (inverted value) which detect data of a memory cell 30 is controlled by an output signal WC, WC (inverted value) from the control circuit 5. A writing control signal PWC, WC are in phase, and RWC (inverted value), WC (inverted value) are in phase. When the signal RWC is at high potential in writing, the signal WC too is at high potential, a sink current (it is 15-16mA at the common sense signal lines S, S (inverted), in a storage device corresponding a device using 16 k bits) which flows from a emitter of the memory cell connected to each digit line is made to shunt from not only a sense circuit 3 but each transistor Qw0 and Qw1. In read-out, WC, WC (inverted) is of lower voltage, and nothing affects operation.</p> |
