| 摘要 |
<p>A semiconductor memory formed on a semiconductor layer (30) of a first conductivity type of conduction and having a plurality of fusing-type nonvolatile memory cells (1) arranged nearly in the form of a matrix. The memory cell (1) has a reading transistor (3), a fuse (7), and a fusing transistor (5). One end of the reading transistor (3) is connected to a reading data line (13), and another end thereof is connected to a write data line (17) via the fuse (7). A connection point (C1) of the reading transistor (3) and the fuse (7) are grounded via the fusing transistor (5) and a grounding wiring (15). The write data lines (17) for the rows of the memory cells (1) are commonly connected, and the grounding wirings (15) for the rows are connected in common. A noise-absorbing element (21) is connected between the write data line (17) and the grounding wiring (15) to suppress the potential difference between them when the fuse (7) is melted.</p> |
