| 摘要 |
A method of making a charge transfer device, capable of forming a plurality of transfer electrodes, using a single conductive layer, with a narrow transfer electrode gap enough to achieve a high transfer efficiency. The method comprises forming an impurity layer of a second conductivity type, a first insulating layer and a semiconductor layer in this order, over a first conductivity type semiconductor substrate, forming spaced semiconductor layer patterns, forming a second insulating layer over the resultant entire exposed surface and implanting impurity ions of the first conductivity type in the second conductivity type impurity layer so as to form spaced impurity layers of the first conductivity type, and forming a third insulating layer over the resultant entire exposed surface and etching back the third insulating layer to the semiconductor layer patterns. After removing the semiconductor layer patterns and the remaining third insulating layer, a conductive layer and a fourth insulating layer are formed over the entire surface of the remaining second insulating layer. Thereafter, the fourth insulating layer, the conductive layer and the second insulating layer are etched back, so as to form separate conductive layer patterns as transfer electrodes.
|
