| 摘要 |
PURPOSE:To provide an MOS transistor and its manufacturing method by which the leak current due to crystal defects can be reduced. CONSTITUTION:A source region 3a and a drain region 3b, which are formed separately on a substrate surface 15a, are provided. An insulating film 4 and a gate electrode 5 are formed on a channel region 11. Interlayer insulating films 8 and 9 and a metal wiring 10 are formed thereon. Ion-implantation blocking layers 7 and 7a, which are jutted out into the channel region 11 in the prescribed width from the source region 3a and the drain region 3b, are provided between the substrate surface 16a and the metal wiring 10. These ions implantation block layers 7 and 7a block the implantation of impurity ions into the source region side 11a and the drain region side 11b of the channel region 11. |
