| 摘要 |
<p>PURPOSE:To decrease problems such as the disconnection, etc., of upper wiring due to stepped parts for assuring the low resistance wiring producing no unfavorable effect on the liquid crystal characteristics by using a single crystal semiconductor layer as a wiring. CONSTITUTION:An SOI substrate comprising an insulating layer 1 and a single crystal semiconductor 1 is prepared for LOCOS to separate a device formation region by SiO2 for insulation. Later, polysilicon deposited by gate oxidation and CVD steps is patterned to be formed into a polygate and then a single crystal wiring is used as a wiring layer to form a source.drain. Furthermore, a single crystal layer to be a single crystal Si layer is to be formed of a porous Si base substance. Accordingly, the crystal orientational disturbance can be reduced thereby enabling a liquid crystal display having excellent picture quality to be manufactured.</p> |
