| 摘要 |
PURPOSE:To provide a non-reducing dielectric ceramic composition that is not formed into a semiconductor even baked in a reducing atmosphere, and to obtain large dielectric constant by forming the composition out of oxides whose principal components are Ba, Sr, Ca, Mg, Ti, Zr and Nb, which satisfy a specific relationship. CONSTITUTION:A non-reducing dielectric ceramic composition comprises oxides, the principal components of which are Ba, Sr, Ca, Mg, Ti, Zr, and Nb, and this is expressed by a formula {(Ba1-x-y-zSrxCay, Mgz)O}m (Ti1-o-pZroNbp)O2+p/2, where x, y, z, o, p and m satisfy 0.05<=x<=0.35, 0.005<=y<=0.12, 0.0005<=z<=0.05, 0<o<=0.20, 0.0005<=p<=0.02, 1.000<=m<=1.04. When oxides of Mn, Fe, Cr, Co, and Ni are expressed MnO2, Fe2O3, Cr2O3, CoO, NiO to 100mol of the principal component, one of each oxide is added by 0.02-2.0mol, and oxide glass principally composed of BaO-SrO-Li2O-SiO2 to 100 parts by weight of the principal component is included therein by 0.05-5.0 parts by weight. |
