发明名称 SOLID-STATE RELAY PHOTODETECTOR
摘要 <p>PURPOSE:To enable a solid-state relay photodetector to be enhanced in both moisture resistance and light coupling efficiency between a light emitting element and a photovoltaic diode. CONSTITUTION:Single crystal island regions 3 insulated from each other by isolation are provided inside a polycrystalline silicon support substrate 1, and a photovoltaic diode 4 is formed inside each of the island regions 3. An oxide film 11 is formed on the diode 4 to serve as an antireflection film. An Al wiring 12 connected to the diode 4 is covered with a surface protective nitride film 13, but the light receiving plane of the diode 4 is not covered with the surface protective nitride film 13.</p>
申请公布号 JPH05218489(A) 申请公布日期 1993.08.27
申请号 JP19920042233 申请日期 1992.01.31
申请人 NEC CORP 发明人 TANISAKO SHINICHI
分类号 H01L31/10;H01L31/12 主分类号 H01L31/10
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