| 摘要 |
<p>PURPOSE:To provide the structure of cumulative capacitors which is enhanced in the opening rate of picture elements and has a process matching property. CONSTITUTION:This thin-film transistor array has plural pieces of thin-film transistors(TFTs) having gate electrodes formed on the main surface of a transparent substrate 1 and picture element electrodes 10 connected to the respective TFTs. At least two insulating layer are provided between the gate electrodes and the picture element electrodes 10. Transparent auxiliary electrodes 8 are provided on at least one insulating layers 7 of these insulating layers and at least one insulating layers 9 are clamped between the transparent auxiliary electrodes 8 and the picture element electrodes 10, by which the cumulative capacity components are formed. Since the auxiliary electrodes 8 are transparent, the opening rate of the picture elements is not adversely affected. Since the transparent auxiliary electrodes 8 are provided after the gate electrodes are formed, the process matching property is good.</p> |
