发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE: To prevent contamination due to the deposition of a material and with possible free particles of the material by introducing an auxiliary gas in a reactor chamber, so that the gas pressure at an open coupling is equal approximately to the pressure in a process space for staying the process gas. CONSTITUTION: An auxiliary gas 11 is fed into a reactor chamber, so as to realize equal gas pressure at an open coupling 9 to the gas pressure in a process space 8, wherein a process gas 5 is approximately stationary to form a so-called staying layer and can be actually used completely for a layer 6 with comparatively little consumption of the gas, thus comparatively lowering the cost for purifying the process gas itself and exhaust gas.
申请公布号 JPH05218002(A) 申请公布日期 1993.08.27
申请号 JP19920277313 申请日期 1992.10.15
申请人 PHILIPS GLOEILAMPENFAB:NV 发明人 YAN FUITSUSERU
分类号 C23C16/54;C23C16/44;C23C16/455;C30B25/14;H01L21/31 主分类号 C23C16/54
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