| 摘要 |
<p>PURPOSE:To enhance a semiconductor photodetective element in yield and productivity when the crystal lattice mismatching of a photodetective layer to InP of a substrate or the like is distributed in a plane. CONSTITUTION:Mixed gas of In gas, Ga gas, and As gas is supplied onto the surface of an N-InP substrate in a certain direction to form an epitaxial layer provided with a photodetective layer composed of In, Ga, and As. P-type impurities are thermally diffused into the photodetective layer for the formation of a floating P-type layer. The substrate where the P-type layer is formed is element-isolated. The isolation of element is carried out in a region where a value is more than -0.2% but less than 0%, where the value is the lattice mismatching degree of the photodetective layer to InP, increases monotonously from a gas feed side toward a downstream side, and defined by a formula, DELTAa/a=[{(lattice constant of photodetective layer)-(lattice constant of InP)]/(lattice constant of InP)]X100(%).</p> |
