| 摘要 |
The method for forming a polyimide resin pattern comprises (a) coating an adhesion promotor and a polyimide resin on the metal wire-formed subwafer (1), and curing the resin to form a polyimide layer (3), (b) depositing an oxide film (4) of about 1000 angstroms thickness on the top of the layer (3) by the chemical vapour deposition, (c) forming a pattern of a photoresistor (5), and then etching the oxide film (4), (d) removing the photoresistor and the polyimide layer (3), and (e) wholly removing the residual oxide film (4).
|
