METHOD FOR PREPARATION OF SEMICONDUCTOR

摘要

The photoetching method is characterized by (a) coating a light absorptive resin (13) of a pullulanic polymer on the coated photosensitive film (12) of the silicon substrate (11), and (b) transmitting a ultraviolet ray to the photosensitive film (12) through the resin. The method improves a luminance and a contrast by the control of a ultraviolet-transmitting ratio transmitted on the film (12).