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发明名称
MANUFACTURING METHOD OF ASYMMETRIC LDD TYPE MOSFET
摘要
申请公布号
JPH05211161(A)
申请公布日期
1993.08.20
申请号
JP19920256669
申请日期
1992.09.25
申请人
NEC CORP
发明人
HORIUCHI TADAHIKO
分类号
H01L21/336;H01L29/78
主分类号
H01L21/336
代理机构
代理人
主权项
地址
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