II - VI COMPOUND SEMICONDUCTOR EPITAXIAL LAYER, ITS MANUFACTURE AND APPARATUS USING IT

摘要

PURPOSE: To provide a group II-VI semiconductor compound epitaxial layer having a low lattice defect generation rate. CONSTITUTION: A group II-VI semiconductor compound epitaxial layer E is manufactured by first depositing a partial monomolecular compound layer 94 of a cation chemical species on a substrate 92 and then by depositing a thin compound layer 96 thereon by a migration enhanced epitaxial(MEE) process. When a remainder 98 of the epitaxial layer E is grown by a molecular beam epitaxy process(MBE) process, such defects as stacking faults can be markedly reduced, when compared with a case where an entire layer E is grown by the MBE process. The epitaxial layer E is useful in a device, such as an LED or an injection laser.