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发明名称
SINGLE TRANSISTOR NON-VOLATILE ELECTRICALLY ALTERABLE SEMICONDUCTOR MEMORY DEVICE WITH A RE-CRYSTALLIZED FLOATING GATE
摘要
申请公布号
EP0464196(A4)
申请公布日期
1993.08.18
申请号
EP19910904033
申请日期
1991.01.18
申请人
SILICON STORAGE TECHNOLOGY, INC.
发明人
YEH, BING;JENQ, CHING-SHI
分类号
H01L21/28;H01L29/423;H01L29/788;(IPC1-7):H01L27/02;G11C11/40;H01L21/70;H01L29/78
主分类号
H01L21/28
代理机构
代理人
主权项
地址
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