| 摘要 |
<p>PURPOSE:To cover the damage of a three-dimensional integrated circuit produced in a special lot by providing a substituting circuit for reducing the trouble in the integrated circuit and manufacturing the substituting circuit and the integrated circuit in different lots. CONSTITUTION:An inverter circuit formed of an N-channel MOS transistor (TR) T1, T2 is formed on a single crystal Si substrate. The TRT1, T2 are isolated via an isolating insulation film 10. The drain 2 of the TRT1 and the source 4 of the TRT2 are electrically connected via a wire (MoSi2)8. Then, the first interlayer isolating film 20 is covered by a reduced pressure CVD method, and an Si crystal film 21 forming an MOS transistor T3 and a GaAlAs crystal film 24 forming a light emitting diode D1 are formed thereon. Thus, the first laminated element region is formed. Sequentially, said steps are repeated to form the N-th layer. Thus, N-MOST4, P-MOST5, and photodiode D2 are formed. The diode D2 is optically coupled to the diode D1 becoming ON by the operation of an inverter circuit of the substrate with the buried ZnS, thereby diagnosing the substituting function of a certain layer.</p> |
