| 摘要 |
PURPOSE:To obtain the FET, noises therefrom are low and gm thereof is high. by forming a plurality of small split islands to a semiconductor substrate, shaping a gate so as to cross all the small split islands and forming source and drain regions to each small split island. CONSTITUTION:An N type layer 1 on the P<+> type substrat 2 is changed into an islnd by a framed isolation region 3, and a beltlike auxiliary isolation region 15 is shaped to an intermediate section of the island 4. Accordingly, the island 4 is turned into the small split islands 16. P<+> type gate regions 5 with approximately 1mum width are contacted with the isolation region 3 while being formed so that the central sections contact with the auxiliary isolation region 15. N<+> type source regions 9 and N<+> type drain regions 8 are shaped holding the gate regions 5 in each small split island 16. Consequently, the series resistance of the gate is minimized because the intermediate sections of the gate regions 5 are conducted with the P<+> type substrate 2 through the auxiliary isolation region 15. |
