| 摘要 |
PURPOSE:To prevent the disconnection of an aluminum wire in a multilayer wire of a semiconductor device by flattening the contacting hole periphery of the respective wire layers and the interlayer insulating layer and particularly the first insulating layer on the substrate. CONSTITUTION:A semiconductor element is formed on an Si semiconductor substrate 1. Then, a field insulating film 2, a gate insulating film 3, a gate electrode 4 and a phosphours silicate glass layer 5 made of SiO2 are formed. A contacting hole for an aluminum wire 6 is formed. It is then heat treated to soften and fluidize the phosphorus silicate glass, thereby smoothening the oblique of the periphery of the contacting hole. Thus, the disconnection of the first aluminum layer is prevented. The uppermost layer wire is removed from the first layer wire. The thickness of the aluminum wire of the respective layers is reduced to 200-6,000Angstrom . Thus, the stepwise difference of the wiring pattern is reduced. The respective wire layers are flattened. In this manner, the disconnection can be prevented. |
