SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To provide a semiconductor device wherein deterioration during the flattening process of a layer insulating film of the characteristic of an oxidizable electrode formed of an easily oxidizable material is small in a semiconductor device in which a multilayer interconnection is formed on a semiconductor substrate. CONSTITUTION:The title semiconductor device includes the following: a semiconductor substrate 1 which forms a semiconductor element; an oxidizable electrode 3 which is arranged at the upper part of the semiconductor substrate and which is formed of an oxidizable material; an oxidation-resistant layer 5 which is arranged so as to cover the oxidizable electrode 3 and which is formed of a material stopping the passage of oxygen; and a layer insulating film 7 formed on the oxidation-resistant layer 5.