| 摘要 |
PURPOSE: To simplify manufacture by extracting a small single crystal with a size smaller than a permeation depth of a magnetic field vertical to a crystal C axis from high temperature superconductor solution or by epitaxially adhering the crystal on a substrate and manufacturing a single crystal or performing after-treatment on the crystal in an inert atmosphere under control oxygen partial pressure or in vacuum. CONSTITUTION: Many crystal structures of some high temperature superconductors are used for constituting Josephson junction. The high temperature superconductor is a single crystal structure which performs electric transfer on an copper oxide flat plane. For its anisotropy, for instance, high temperature superconductor Bi2 Sr2 CaCu2 O3 having a transition temperature of 50-90 deg.K is used. The double flat planes of copper oxide is approved, and a coordination polyhedron is formed of pyramids. To prevent influence on coherence length, the crystal is baked in an inert gas atmosphere or vacuum up to 700 deg.C until a ratio of conductivity parallel to copper oxide flat plane to conductivity vertical to the flat plane becomes 10-10<6> under control oxygen partial pressure.
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