| 摘要 |
A field effect transistor includes source and drain electrodes (3a, 3b) disposed on a semiconductor substrate (1), a flat insulating film (4) disposed on the substrate (1) and having contact holes (4a, 4b) which are positioned on the source and drain electrodes (3a, 3b) and filled with metal films (7a, 7b), barrier metal layers (8a, 8b) disposed on the metal films (7a, 7b) covering the interfaces between the metal films (7a, 7b) and the insulating film (4), and source and drain wiring layers (9a, 9b) disposed on the barrier metal layers (8a, 8b). Impurity diffusion between the source (drain) electrode and the electrode wiring layer is effectively prevented by the barrier metal layer. In addition, since the interface between the metal film buried in the contact hole and the insulating film, is covered with the barrier metal layer, the mutual impurity diffusion between the electrode and the wiring layer along the interface is prevented by the barrier metal layer. <IMAGE> |
