发明名称 |
Thin film resistor and wiring board using the same |
摘要 |
A thin film resistor having a characteristic that an increase phenomenon of a resistance controlled at a high temperature is generated. The resistor is obtained by controlling its composition and manufacturing method so as to suppress an increase in the resistance of a Cr-Si resistor thin film due to deposition of chromium silicide at a high temperature. A sputtering target, which is used as a raw material for forming the thin film, is made from chromium silicide and silicon so that some chromium silicide is already formed immediately after deposition, and chromium oxide and silicon oxide are contained in the thin film so as to suppress the speed whereat chromium and silicon, which do not form silicide, form silicide by heating after deposition and to allow the above silicide formation to advance slowly.
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申请公布号 |
US5235313(A) |
申请公布日期 |
1993.08.10 |
申请号 |
US19910723608 |
申请日期 |
1991.07.01 |
申请人 |
HITACHI, LTD. |
发明人 |
NARIZUKA, YASUNORI;IKEDA, SYOOZI;YABUSHITA, AKIRA;ISHINO, MASAKAZU;KISHIDA, JUICHI |
分类号 |
B41J2/335;H01C7/00;H05B3/12;H05B3/14 |
主分类号 |
B41J2/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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