发明名称 PHOTOPROCESSING METHOD FOR FINE PATTERN
摘要 PURPOSE:To enable selective processing of fine patterns without using a resist by emitting pulse lasers of a specific wavelength and irradiating a substrate through a glass mask constituted by selectively forming non-sublimatable metal or org. films on quartz, more preferably synthetic quartz which shields this wavelength. CONSTITUTION:The mask 5 of the fine patterns provided in tight contact with the synthetic quartz 4 is formed. The pulse laser beams of <=400nm wavelength are selectively transmitted by this mask 5. These pulse laser beams are transmitted through the one main surface of the substrate 1 in a vacuum to transfer the fine patterns on this one main surface, by which the substrate is selectively removed or deteriorated in properties. For example, CFT 2 of tin oxide added with fluorine or antimony is formed atop the glass substrate as the substrate. A laser beam source for light emission of <=400nm wavelength is used for the substrate 1 having the surface 2 to be worked. The mask constituted by selectively forming nickel 5 at 1500Angstrom thickness on the synthetic quartz 4 is used.
申请公布号 JPH05196949(A) 申请公布日期 1993.08.06
申请号 JP19920193006 申请日期 1992.06.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 YAMAZAKI SHUNPEI;NAGAYAMA SUSUMU;ITO KENJI
分类号 B41M5/26;G02F1/1343 主分类号 B41M5/26
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