| 摘要 |
<p>PURPOSE:To prevent charging at the time of exposure without lowering the strength of the holding frame of an X-ray mask structure and thermal stability by forming an ion implanting section to the holding frame, forming a conductive section to at least a part of the gripping means of the X-ray mask structure and electrically connecting the conductive section as required. CONSTITUTION:An X-ray absorber 23 composed of a material having large absorption to the exposure X-rays of gold, tantalum, tungsten, etc., is supported by an X-ray transmission film 21 by silicon nitride, silicon carbide, boron nitride, a polyimide organic film or an organic-inorganic composite film. 22' represents a part of a holding frame 22 supporting the X-ray transmission film 21, and back-etches a silicon wafer, and ions are implanted to the outermost circumferential section of 22' by focused ion beams. The holding frame 22 of a reinforcing body consisting of quartz glass, etc., reinforces the silicon wafer 22', an electrode layer 24 is formed onto the whole surface of an X-ray mask, and the holding frame 22 covers an ion implanting section 28 and the holding frame 22 and the ion implanting section 28 are conducted mutually. The ion implanting section 28 of the mask holding frame 22 is brought into contact, and photoelectrons and Auger electrons generated from the X-ray absorber 23 at the time of X-ray exposure are absorbed to a mask electrode layer 24 on the transmission film.</p> |
