| 摘要 |
<p>PURPOSE:To prevent the destruction of a gate oxidized film of a memory cell by eliminating the stress which may impinge upon the gate of the memory cell which is not selected in a semiconductor read dedicated memory. CONSTITUTION:Depression.transistors 107a, 107c, 108a and 108c which are ON by a 0V gate voltage and are OFF by a negative potential and depression.transistors 107b and 108b which are always in an ON condition because the threshold value is a sufficiently negative potential are used in a memory cell. By only making the potential of the gate of a memory cell to be selected be a negative potential and making the rest of the gates to be 0V, memory cell selection is accomplished. Moreover, negative potential signals are required, a signal conversion is performed by a voltage deduction circuit 116. So long as a memory cell is not selected, a 0V is impressed to the gate and no stress is impinged. Therefore, the destruction of a gate oxidized film of a memory cell is prevented.</p> |
