| 摘要 |
PURPOSE: To obtain a semiconductor device, which can lower making resistance to keep mechanical durability by allowing a second main plane to have a recess that becomes smaller inward and by allowing an anode to have a boundary that is in contact with the second main plane, wall surface of the recess and bottom surface. CONSTITUTION: This device is provided with a p-doped base region 4 on the side upper side of a main plane 2 of a substrate 1, and a strongly n-doped source region 5 is embedded therein. A main plane 3 on anode side is provided with a recess that becomes smaller inward, and an anode region 10 is in contact with an anode-side main plane 3 and the wall surface 8 and a bottom surface 7 of a recess 6. Then an anode region 10 is provided with a metallic layer 15, and the source and base region 5 and 4 are brought into contact with each other through a source electrode 11. Furthermore, the main plane 2 is covered with an insulator layer 13, a gate electrode 12 is arranged on the insulation layer 13, which covers a part adjacent to the main plane 2 of the base region 4 and overlaps a part of the source region 5. Therefore, a p-n junction part 14 exists between the base region 4 and the substrate 1, and the forward resistance of this device can be lowered by partly reducing he thickness of the semiconductor body. |
