| 摘要 |
PURPOSE: To improve temperature sensing accuracy by determining the concentration of impurities in second and third regions so that the relative temperature coefficient of resistance regarding the sensed temperature is almost constant, while the temperature of resistance changes together with the absolute temperature. CONSTITUTION: A semiconductor device RX, provided with a semiconductor body 10 having a first conductive-type first region 13 adjacent to a one-side main surface 10a and a resistance which changes together with the temperature in the main surface, is formed. In this device RX, an opposite conductive-type second region 14 is formed in the region 13 and a first conductive-type third region 15 is formed in the region 14, and first and second electrodes 16 and 17 apart from each other are formed thereon. In addition, a resistance passage is formed by the region 15 between the electrodes 16 and 17, and a reference electrode 18 connected with a reference potential point is provided in the region 14. Then the concentration of impurities in the regions 14 and 15 are determined, so that the relative temperature coefficient of resistance concerning the second temperature is almost constant, while the temperature of resistance changes together with the absolute temperature. |
