METHOD OF MANUFACTURE DOUBLE GATE MOS TRANSISTOR,申请号JP19920007930-传众专利搜索

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发明名称	METHOD OF MANUFACTURE DOUBLE GATE MOS TRANSISTOR
摘要
申请公布号	JPH05198812(A)	申请公布日期	1993.08.06
申请号	JP19920007930	申请日期	1992.01.20
申请人	FUJITSU LTD	发明人	ANDO TOMOSHI;YAMASHITA YOSHIMI
分类号	H01L27/12;H01L29/78;H01L29/786	主分类号	H01L27/12
代理机构		代理人
主权项
地址

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