发明名称 |
Method for forming a thin semiconductor film |
摘要 |
A method for forming a thin semiconductor film comprises the steps of supplying on a surface of a heated substrate a first material gas composed of germanium halide or germanium hydro-fluoride obtained by partially substituting fluorine of the germanium fluoride together with a second material gas composed of silicon hydride or silicon fluoro-hydride obtained by partially substituting hydrogen of the silicon hydride with fluorine and causing a chemical reaction between the first and second material gases, thereby growing a thin film containing germanium over the surface of the substrate. By controlling the substrate temperature or flow rate ratio of the first material gas to the second material gas, an optical gap of the thin film grown can be controlled.
|
申请公布号 |
US5232868(A) |
申请公布日期 |
1993.08.03 |
申请号 |
US19910742101 |
申请日期 |
1991.08.05 |
申请人 |
AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
HAYASHI, YUTAKA;YAMANAKA, MITSUYUKI |
分类号 |
H01L21/205;H01L31/20 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|