| 摘要 |
PURPOSE:To provide a lower gate structure TFT transistor with little variation in characteristics and with high reliability, in which a thin TFT channel part and thick TFT source-drain part can be formed and source-drain and offset can be formed in self-aligning manner with a gate electrode. CONSTITUTION:In a lower gate structure TFT transistor, a channel part 207 is formed to a film thickness thinner than that of a source-drain part 206 and not only source-drain but also offset is formed in self-aligning manner with a gate electrode. |
