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发明名称
FORMING METHOD FOR LDD STRUCTURE OF COMPOUND SEMICONDUCTOR MESFET
摘要
申请公布号
JPH05190483(A)
申请公布日期
1993.07.30
申请号
JP19920003787
申请日期
1992.01.13
申请人
MURATA MFG CO LTD
发明人
IWATA MOTOYOSHI
分类号
H01L21/265;H01L21/266;H01L21/302;H01L21/3065;H01L21/338;H01L29/812
主分类号
H01L21/265
代理机构
代理人
主权项
地址
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