MANUFACTURE OF THIN FILM SEMICONDUCTOR DEVICE AND ACTIVE MATRIX SUBSTRATE USING SAID DEVICE

摘要

PURPOSE:To manufacture a polycrystalline thin film semiconductor device small in dispersion of characteristics and excellent in reproducibility and reliability by a method wherein a gate insulating film, an a-Si:H film, and an N-type silicon film are successively and continuously formed and then irradiated with laser rays. CONSTITUTION:A gate electrode 11 of chrome film or the like is formed on a glass substrate 10, and then a silicon nitride film 12, a hydrogenated amorphous silicon film 13, and an N-type silicon film 14 are successively formed through a CVD method. Thereafter, XeCl excimer laser rays are made to irradiate the glass substrate 10 through the N-type silicon film 14. The laser rays are so set in energy to be smaller than a threshold value at which the silicon film 14 is fused. Then, after a source and a drain electrode are formed, a passivation film is formed. By this setup, a polycrystalline thin film semiconductor device small in dispersion of characteristics and excellent in reproducibility and reliability can be manufactured.