| 摘要 |
<p>A photoresist composition comprising (a) a difficultly alkali-soluble resin obtained by reacting isopropenyl alkyl ether, 2-alkoxy-1-butene, isopropenyl trimethylsilyl ether or isopropenyl benzyl ether with a resin having phenolic hydroxyl groups, (b) a photosensitive compound which generates a carboxylic acid upon exposure to light, and (c) a solvent capable of dissolving the components (a) and (b), is effective for pattern formation using deep ultraviolet light, KrF excimer laser beams, etc.</p> |
