发明名称 |
ELECTROSTATIC CAPACITY VARIATION TYPE SEMICONDUCTOR ACCELERATION SENSOR |
摘要 |
PURPOSE:To provide an electrostatic capacity variation type semiconductor acceleration sensor whose gap between a wiring material and a wiring groove is completely sealed up with an insulating elastic member to dissolve the occurrence of the trouble of the sensor. CONSTITUTION:An electrostatic capacity variation type semiconductor acceleration sensor 11 electrically detects the variation of an electrostatic capacity between a movable electrode elastically supported as an overlapping part 13 at the central part of a semiconductor substrate 12 and a fixed electrode 18 oppositely provided on a fixed substrate 17 being opposite to the movable electrode to determine acceleration. A wiring groove 19 for connecting wiring to the fixed electrode 18 is formed between the substrate joining faces of the semiconductor substrate 12 and of the fixed substrate 17, and sealed up through an insulating elastic member 22 at the time of joining the substrates of the semiconductor substrate 12 and of the fixed substrate 17. |
申请公布号 |
JPH05180868(A) |
申请公布日期 |
1993.07.23 |
申请号 |
JP19920020619 |
申请日期 |
1992.01.08 |
申请人 |
OMRON CORP |
发明人 |
HOSOYA KATSUMI;OBA MASATOSHI;SHIIKI MASAKAZU |
分类号 |
G01P15/125;G01P15/08;H01L29/84 |
主分类号 |
G01P15/125 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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